Details

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BUY CSD18534Q5A https://www.utsource.net/itm/p/6396912.html
60-V N-Channel NexFET Power MOSFETs

Parameter	Symbol	Min	Typ	Max	Unit	Conditions
Drain-Source Voltage	VDS	-100		100	V
Gate-Source Voltage	VGS	-8		20	V
Continuous Drain Current	ID		76		A	TC = 25掳C
Pulse Drain Current	IDM		340		A	TP = 10 ms, TC = 25掳C
RDS(on) at VGS = 10V	RDS(on)		3.6		m惟	TC = 25掳C
Gate Charge	QG		104		nC	VGS = 10V
Input Capacitance	Ciss		2120		pF	VDS = 0V
Output Capacitance	Coss		260		pF	VDS = 100V
Reverse Transfer Capacitance	Crss		1020		pF	VDS = 100V

Instructions for Use:

1. Voltage Ratings: Ensure that the drain-source voltage (VDS) and gate-source voltage (VGS) do not exceed their maximum ratings to prevent damage to the device.
2. Current Handling: The continuous drain current (ID) and pulse drain current (IDM) should be within specified limits. Pay attention to thermal conditions as they can affect these values.
3. Thermal Management: Keep the junction temperature within safe operating limits by ensuring adequate heat dissipation, especially when operating near maximum current ratings.
4. Switching Applications: For switching applications, consider the gate charge (QG) and capacitance parameters (Ciss, Coss, Crss) which impact switching speed and efficiency.
5. Installation: Ensure proper installation with respect to PCB layout to minimize inductance and maximize performance, particularly for high-frequency switching applications.
6. Handling Precautions: Handle the device carefully to avoid electrostatic discharge (ESD) damage. Use appropriate ESD protection measures during handling and assembly.

(For reference only)