Details

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BUY BSC12DN20NS3G https://www.utsource.net/itm/p/6454318.html
MOSFET N-CH 200V 11.3A 8TDSON

Parameter	Symbol	Min	Typ	Max	Unit	Conditions
Drain-Source On-State Resistance	RDS(on)	-	1.4	-	mΩ	VGS = 10V, ID = 12A
Gate Charge	QG	-	39	-	nC
Input Capacitance	Ciss	-	1650	-	pF	VDS = 15V
Output Capacitance	Coss	-	380	-	pF	VDS = 15V
Reverse Transfer Capacitance	Crss	-	100	-	pF	VDS = 15V
Total Power Dissipation	PD	-	-	200	W	Case Temp
Junction Temperature	Tj	-	-	175	°C
Storage Temperature Range	Tstg	-55	-	150	°C

Instructions for Use:

1. Mounting and Handling: Handle with care to avoid damage to the device. Ensure proper mounting techniques are used to maintain thermal performance.
2. Thermal Consideration: Ensure adequate heat sinking when operating at high power levels to prevent exceeding the maximum junction temperature.
3. Electrical Stress: Avoid subjecting the device to electrical stress beyond its rated parameters. Pay particular attention to VDS(max) and ID(max).
4. Gate Drive Requirements: For optimal performance, ensure the gate drive voltage and current meet the specified requirements, especially to minimize RDS(on).
5. Storage and Operation: Store in a dry environment within the specified storage temperature range. Operate within the recommended operating conditions to ensure reliability.
6. Soldering: Follow standard soldering practices suitable for surface mount devices. Avoid excessive heat during soldering to prevent damage to the component.

(For reference only)