Details

---

BUY IXFN80N50P https://www.utsource.net/itm/p/6486997.html
MOSFET N-CH 500V 66A SOT-227

Parameter	Symbol	Value	Unit	Conditions
Maximum Drain Current	ID	80	A	Tc = 25°C, Pulse Width ≤ 300 μs
Maximum Drain Voltage	VDSS	500	V
Gate-Source Voltage	VGS(th)	4.0 - 6.0	V	ID = 250 μA, Tc = 25°C
Continuous Drain Current	ID	27	A	Tc = 25°C
Power Dissipation	PD	110	W	TC = 25°C
Junction Temperature	Tj	-55 to 150	°C
Storage Temperature	Tstg	-55 to 150	°C

Instructions for Use:

1. Handling Precautions: The IXFN80N50P is sensitive to electrostatic discharge (ESD). Use proper ESD protection when handling the device.
2. Mounting: Ensure that the thermal resistance between the junction and case is minimized by using appropriate heatsinking techniques.
3. Operating Conditions: Do not exceed the maximum ratings listed in the table. Pay special attention to the drain current and voltage limits.
4. Gate Drive: Apply gate voltages within the specified range to ensure reliable operation. Avoid applying excessive gate-source voltage which can damage the device.
5. Thermal Management: Monitor the junction temperature to avoid exceeding the maximum allowable temperature. Adequate cooling may be necessary depending on the application.
6. Storage: Store in a dry, cool environment to prevent damage from moisture or extreme temperatures.

For detailed specifications and more advanced applications, refer to the datasheet provided by the manufacturer.

(For reference only)