Details

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BUY IRF9393PBF https://www.utsource.net/itm/p/6488734.html
Trans MOSFET P-CH 30V 9.2A 8-Pin SO Bulk - Rail/Tube (Alt: IRF9393PBF)

Parameter	Symbol	Conditions	Min	Typ	Max	Unit
Drain-Source Voltage	V(DS)	Continuous	-	-	50	V
Gate-Source Voltage	V(GS)		-15	-	15	V
Continuous Drain Current	I(D)	V(DS) = 25V	-	-	3.9	A
Pulse Drain Current	I(D)	Pulse	-	-	16	A
Power Dissipation	P(TOT)	Ta = 25°C	-	-	41	W
Junction Temperature	T(J)		-55	-	175	°C
Storage Temperature	T(STG)		-55	-	150	°C

Instructions for Use:

1. Handling Precautions:

   • The IRF9393PBF is sensitive to electrostatic discharge (ESD). Handle with care and use appropriate ESD protection measures.

2. Mounting:

   • Ensure proper heat sinking when operating at high power levels to maintain junction temperature within specified limits.
   • Use recommended PCB layout practices to minimize inductance and improve thermal performance.

3. Biasing:

   • Apply gate-source voltage (V(GS)) carefully, ensuring it does not exceed the maximum ratings to prevent damage to the device.

4. Operation:

   • Operate within the continuous drain current (I(D)) and pulse drain current limits to avoid overheating and potential failure.
   • Monitor the junction temperature (T(J)) to ensure it remains within operational limits, especially under high load conditions.

5. Storage:

   • Store in a dry environment within the storage temperature range to prevent damage from moisture or extreme temperatures.

6. Testing:

   • Perform initial testing at low power levels to verify correct operation before applying full load conditions.

(For reference only)