Details

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BUY K4S560832H-UC75 https://www.utsource.net/itm/p/6524682.html
N/A

Parameter Name	Description	Value	Unit
Type	Device Type	SDRAM	-
Organization	Data Organization	8M x 8	bits
Supply Voltage (Vcc)	Operating Supply Voltage	3.3	V
Supply Voltage (Vccq)	I/O Supply Voltage	3.3	V
Clock Frequency	Maximum Clock Frequency	166	MHz
CAS Latency	Column Address Strobe Latency	2	cycles
Burst Length	Burst Mode Length	2, 4, 8	bytes
Operating Temperature Range	Industrial Temperature Range	-40 to +85	°C
Package Type	Package	54-pin TSOP II	-
Refresh Rate	Refresh Cycle Time	7.8 us (64K refresh commands)	us

Instructions for Use:

1. Power Supply Connection:

   • Connect Vcc and Vccq to a stable 3.3V power supply.
   • Ensure adequate decoupling capacitors are placed close to the power pins.

2. Clock Configuration:

   • Apply a clock signal of up to 166 MHz to the CLK pin. Ensure the clock signal is clean and stable to avoid data corruption.

3. Initialization:

   • Perform a reset or initialization sequence as per the datasheet guidelines before starting normal operation.
   • Set the mode register according to the desired configuration (e.g., CAS latency, burst length).

4. Addressing and Control Signals:

   • Provide row and column addresses during read/write operations.
   • Use control signals such as /CS, /RAS, /CAS, and /WE appropriately to initiate memory operations.

5. Refresh Operations:

   • Implement a refresh cycle every 7.8 microseconds to maintain data integrity.
   • The refresh can be done automatically using self-refresh mode or manually controlled by the system.

6. Data Handling:

   • For burst reads/writes, ensure the burst length is set correctly in the mode register.
   • Manage data input/output through DQ lines with appropriate timing relative to the clock edges.

7. Termination and Signal Integrity:

   • Consider termination resistors on high-speed signal lines to prevent reflections and improve signal integrity.
   • Follow layout guidelines provided in the datasheet for optimal performance.

8. Handling and Storage:

   • Handle the device with care to avoid ESD damage.
   • Store in recommended environmental conditions to prevent degradation.

For detailed specifications and advanced configurations, refer to the official datasheet provided by the manufacturer.

(For reference only)