Details

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BUY IRF150 https://www.utsource.net/itm/p/6524715.html
N/A

Parameter	Symbol	Min	Typ	Max	Unit	Conditions
Drain-Source On-State Resistance	RDS(on)	-	0.18	-	Ω	VGS = 10V, ID = 20A
Gate-Source Threshold Voltage	VGS(th)	2.0	-	4.0	V	ID = 250μA
Continuous Drain Current	ID	-	-	39	A	TC = 25°C
Pulse Drain Current	IDM	-	-	120	A	Pulse width ≤ 10ms, Duty cycle ≤ 2%
Power Dissipation	PD	-	-	76	W	TC = 25°C
Junction Temperature	TJ	-	-	150	°C	-
Storage Temperature Range	TSTG	-55	-	150	°C	-

Instructions for Use:

1. Handling Precautions: The IRF150 is sensitive to electrostatic discharge (ESD). Use proper ESD precautions when handling the device.
2. Mounting: Ensure that the mounting surface is flat and clean to achieve optimal heat dissipation. Apply thermal compound if necessary.
3. Gate Drive: For optimal performance, ensure the gate drive voltage (VGS) is within specified limits. Avoid exceeding the maximum ratings.
4. Heat Sinking: If operating near maximum current or power dissipation, use an appropriate heatsink to maintain junction temperature within safe limits.
5. Pulse Operation: When using in pulse applications, ensure the duty cycle and pulse width do not exceed recommended values to prevent overheating.
6. Storage: Store in a dry environment within the specified storage temperature range to avoid damage.

(For reference only)