Details

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BUY 2N3898 https://www.utsource.net/itm/p/6524883.html
N/A

Parameter	Symbol	Min	Typical	Max	Unit	Conditions
Collector-Emitter Voltage	V(BR)CEO	-	-	100	V	IC = 20 mA, TC = 25°C
Emitter-Base Voltage	V(BR)EBO	-	-	6	V	IE = 10 mA, TC = 25°C
Collector-Base Voltage	V(BR)CBO	-	-	75	V	IC = 1 mA, TC = 25°C
Collector Current	IC	-	-	20	mA	VCE = 30 V, TC = 25°C
Base Current	IB	-	-	5	mA	VCE = 30 V, TC = 25°C
Power Dissipation	PD	-	-	625	mW	TC = 25°C
Junction Temperature	TJ	-	-	150	°C
Storage Temperature	TSTG	-65	-	150	°C

Instructions for Use:

1. Handling Precautions: Avoid exposing the device to temperatures exceeding the maximum junction temperature (TJ). Ensure proper heat sinking if operating near maximum power dissipation.
2. Mounting: Ensure that the mounting hardware does not exceed the specified mechanical limits and provides adequate thermal conduction if necessary.
3. Biasing: Proper biasing of the base-emitter junction is critical to avoid exceeding the emitter-base breakdown voltage (V(BR)EBO).
4. Operation: Operate within the specified electrical limits to ensure reliable performance and prevent damage to the device.
5. Storage: Store in a dry environment within the specified storage temperature range to prevent degradation.

(For reference only)