Details

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BUY 2N5943 https://www.utsource.net/itm/p/6524916.html
N/A

Parameter	Symbol	Min	Typ	Max	Unit	Description
Collector-Emitter Voltage	V(BR)CEO	-	-	30	V	Collector-Emitter Breakdown Voltage
Collector-Base Voltage	V(BR)CBO	-	-	30	V	Collector-Base Breakdown Voltage
Emitter-Base Voltage	V(BR)EBO	-	-	5	V	Emitter-Base Breakdown Voltage
Collector Current	IC	-	1.5	-	A	Continuous Collector Current
Power Dissipation	PD	-	-	62.5	mW	Maximum Power Dissipation
Total Device Dissipation	PT	-	-	125	mW	Maximum Total Device Dissipation
Junction Temperature	TJ	-	-	150	°C	Maximum Junction Temperature
Storage Temperature	TSTG	-55	-	150	°C	Operating Temperature Range

Instructions for Use:

1. Handling Precautions: The 2N5943 is sensitive to electrostatic discharge (ESD). Use appropriate ESD protection measures during handling and installation.
2. Mounting: Ensure proper mounting techniques to avoid mechanical stress on the device, which can affect its performance and reliability.
3. Heat Management: Given the maximum power dissipation limits, ensure adequate heat sinking if operating near maximum power levels to maintain junction temperature within safe limits.
4. Biasing: Operate within specified voltage and current limits to prevent damage. Pay attention to biasing conditions to ensure stable operation.
5. Storage: Store in a dry, cool environment away from direct sunlight and sources of heat to prevent degradation.
6. Soldering: If soldering, do not exceed temperatures that could cause thermal shock or damage to the component. Follow recommended soldering profiles provided by the manufacturer.

This table and these instructions provide essential information for the correct application and handling of the 2N5943 transistor.

(For reference only)