Details

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BUY 2N5446 https://www.utsource.net/itm/p/6524924.html
N/A

Parameter	Symbol	Min	Typ	Max	Unit	Conditions
Collector-Emitter Voltage	V(BR)CEO	-	-	30	V	IC = 10mA, IE = 0
Emitter-Base Voltage	V(BR)EBO	-	-	6	V	IE = 5mA
Collector-Base Voltage	V(BR)CBO	-	-	30	V	IC = 10mA, IB = 0
Collector Current	IC	-	-	100	mA	VCE = 30V
Base Current	IB	-	-	5	mA	VCE = 30V
Power Dissipation	PD	-	-	300	mW	TC = 25掳C
Total Device Dissipation	PTOT	-	-	300	mW	TC = 25掳C
Junction Temperature	TJ	-	-	150	掳C
Storage Temperature	TSTG	-55	-	150	掳C

Instructions for Use:

1. Handling Precautions: The 2N5446 is a silicon NPN transistor and should be handled with care to avoid damage from electrostatic discharge (ESD). Use proper ESD protection measures during handling.
2. Biasing: Ensure the base-emitter junction is forward biased for proper operation. Typically, a small base current controls a larger collector current.
3. Operating Conditions: Operate within specified voltage and current limits to prevent damage. Pay special attention to maximum ratings for collector-emitter and emitter-base voltages.
4. Heat Management: Since the maximum power dissipation is limited, ensure adequate heat sinking if operating near maximum power levels.
5. Mounting: For surface mount devices, follow recommended soldering profiles to avoid thermal stress.
6. Testing: When testing or measuring parameters, use conditions as close as possible to those specified in the table for accurate results.

(For reference only)