Details

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Parameter	Description	Value
Device Type	High-Speed CMOS 64K x 8 UV-Erasable PROM
Part Number	MBM27C512-20
Package Type	28-Pin Plastic DIP (Dual In-line Package)
Operating Voltage Vcc	Supply Voltage Range	4.5V to 5.5V
Access Time	Maximum Access Time	20ns
Data Retention	Data Retention Time	10 years
Endurance	Write/Erase Cycles	10,000 cycles
Temperature Range	Operating Temperature	0°C to +70°C
Storage Temperature	Storage Temperature	-65°C to +150°C
Programming Voltage	Programming Voltage (Vpp)	12.5V ± 0.5V
Erasure Method	Ultraviolet Light Erasure
Erasure Time	Typical Erase Time under UV Exposure	15-30 minutes

Instructions for Use:

1. Power Supply:

   • Ensure the supply voltage is within the specified range of 4.5V to 5.5V to prevent damage to the device.

2. Programming:

   • Apply a programming voltage (Vpp) of 12.5V ± 0.5V during the write cycle.
   • Follow the specific timing requirements for data input and address setup.

3. Erase Operation:

   • Expose the device to ultraviolet light for at least 15 to 30 minutes to ensure complete erasure of all memory cells.
   • The exposure should be done in an environment with adequate UV intensity as per datasheet specifications.

4. Handling Precautions:

   • Handle the device with care to avoid electrostatic discharge (ESD).
   • Store the device in a protective packaging until ready for use to minimize exposure to environmental contaminants.

5. Installation:

   • Insert the device into the socket or PCB ensuring correct orientation and alignment.
   • Verify that the power connections are correctly wired before powering on the system.

6. Testing:

   • After installation, perform read/write tests to verify proper operation and data integrity.
   • Check access times and ensure they meet the specified 20ns maximum.

(For reference only)