Details
BUY MG75J1BS11 https://www.utsource.net/itm/p/6526713.html
Silicon N channel IGBTN
| Parameter | Value/Description |
|---|---|
| Part Number | MG75J1BS11 |
| Type | MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) |
| Configuration | N-Channel |
| Drain Source Voltage | VDS(max) = 75V |
| Continuous Drain Current | ID = 11A at Tc = 25掳C, ID = 8.3A at Tc = 60掳C |
| Gate-Source Voltage | VGS(th) = 2V to 4V |
| Power Dissipation | PD = 110W (at Ta = 25掳C) |
| RDS(on) | Max 10m惟 at VGS = 10V, ID = 11A |
| Total Gate Charge | Qg = 90nC |
| Package Type | TO-220 |
| Operating Temperature | TJ = -55掳C to +150掳C |
| Storage Temperature | Tstg = -65掳C to +175掳C |
Instructions:
- Installation: Ensure that the device is handled with care to avoid damage from electrostatic discharge (ESD). Use proper anti-static precautions.
- Mounting: Mount the device on a heatsink if operating near or at maximum current and temperature limits to ensure adequate heat dissipation.
- Biasing: Apply gate-source voltage within the specified threshold range for optimal performance. Avoid exceeding the maximum gate-source voltage to prevent damage.
- Testing: When testing the device, do not exceed the absolute maximum ratings listed in the parameter table.
- Handling: Keep the device away from moisture and corrosive environments to prevent degradation of performance over time.
- Applications: Suitable for switching applications in power supplies, motor control, and other high-power circuits requiring efficient switching.
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