Details

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BUY BSTN45B90 https://www.utsource.net/itm/p/6526736.html

Parameter	Symbol	Test Conditions	Min	Typ	Max	Unit
Breakdown Voltage	BVdss	Vds = -90V, Id = -250渭A	-	-	-90	V
Drain-source On-Resistance	Rds(on)	Vgs = -10V, Id = -9.0A	-	45	-	m惟
Gate Threshold Voltage	Vgs(th)	Id = -1mA	-3.5	-	-1.5	V
Continuous Drain Current	Id	Ta = 25掳C	-	-	-9.0	A
Total Power Dissipation	Ptot	Ta = 25掳C	-	-	125	W
Junction Temperature	Tj	Operating Range	-55	-	150	掳C

Instructions for BSTN45B90:

1. Handling Precautions:

   • Use appropriate ESD protection when handling the device to prevent damage from static electricity.

2. Mounting:

   • Ensure that the mounting surfaces are clean and free of contaminants.
   • Apply thermal paste or a thermal pad between the heat sink and the device for efficient heat dissipation.

3. Biasing:

   • Always apply gate voltage within the specified limits to avoid damaging the gate oxide.
   • Ensure that the gate-source voltage (Vgs) does not exceed the maximum rating.

4. Operation:

   • Keep the junction temperature within the operating range to ensure reliable operation.
   • Monitor the power dissipation and use adequate cooling methods if necessary.

5. Storage:

   • Store in a dry environment to prevent moisture damage.
   • Follow recommended storage conditions as outlined by the manufacturer.

6. Testing:

   • During testing, adhere to the specified test conditions to accurately measure parameters like breakdown voltage, on-resistance, and threshold voltage.

7. Applications:

   • Suitable for applications requiring high efficiency and low on-resistance, such as motor control, switching power supplies, and battery management systems.

(For reference only)