Details

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BUY APT6018JN https://www.utsource.net/itm/p/6526771.html
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS

Parameter	Description	Value
Device Type	High Voltage Power MOSFET	APT6018JN
VDS (Max)	Drain-Source Voltage	650 V
RDS(on) (Max)	On-State Resistance at 25掳C, VGS = 10V	180 m惟
ID (Max)	Continuous Drain Current at TJ = 25掳C	6.9 A
PD (Max)	Total Power Dissipation at TJ = 25掳C	13.7 W
fT	Transition Frequency	4.2 MHz
Qg (Total)	Total Gate Charge	55 nC
** Qgs**	Gate-to-Source Charge	12 nC
Qgd	Gate-to-Drain Charge	10 nC
Input Capacitance (Ciss)	Input Capacitance at VDS = 0V, VGS = 0V	1250 pF
Output Capacitance (Coss)	Output Capacitance at VDS = 400V, VGS = 0V	50 pF
Reverse Transfer Capacitance (Crss)	Reverse Transfer Capacitance at VDS = 400V, VGS = 0V	45 pF
Package	Package Type	TO-220FP
Operating Temperature Range (TJ)	Junction Temperature Range	-55掳C to +150掳C

Instructions for Use:

1. Handling Precautions: The APT6018JN is sensitive to electrostatic discharge (ESD). Handle with appropriate ESD precautions.
2. Mounting: Ensure proper heat dissipation by mounting the device on a heatsink if operating near maximum power levels.
3. Biasing: Apply gate voltage carefully to avoid exceeding the maximum ratings. Recommended gate voltage range for optimal performance is typically between 10V and 20V.
4. Storage: Store in a dry environment and follow the recommended storage conditions as specified in the datasheet.
5. Testing: When testing the device, ensure that all voltages and currents are within the specified limits to prevent damage.
6. PCB Layout: For best performance, use a PCB layout that minimizes parasitic inductances and resistances. Keep high current paths short and wide.
7. Derating: Derate the drain current and power dissipation according to the temperature derating curves provided in the datasheet when operating at elevated temperatures.

(For reference only)