Details

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BUY IRFK6J450 https://www.utsource.net/itm/p/6526823.html
Isolated Base Power HEX-pak Assembly-Half Bridge Configuration

Parameter	Symbol	Min	Typ	Max	Unit	Conditions
Collector-Emitter Voltage	VCES			450	V
Gate-Source Voltage	VGS	-15		15	V
Continuous Drain Current	ID		6		A	TC = 25掳C
Pulse Drain Current	ICM		36		A	tp = 10 渭s, TC = 25掳C
Power Dissipation	PD		125		W	TC = 25掳C
Junction Temperature	Tj			175	掳C
Storage Temperature	Tstg	-55		150	掳C
Total Device Dissipation	PTOT		125		W	TC = 25掳C

Instructions for Use:

1. Mounting and Handling:

   • Ensure the device is mounted on a suitable heatsink to maintain junction temperature within specified limits.
   • Handle with care to avoid damage to the leads or body.

2. Electrical Connections:

   • Connect the gate terminal carefully to prevent parasitic inductance which can cause unwanted oscillations.
   • Ensure all connections are secure and insulated to prevent short circuits.

3. Operating Conditions:

   • Do not exceed the maximum ratings under any operating conditions.
   • For continuous operation, ensure that the device's power dissipation does not exceed the rated value at the given ambient temperature.

4. Storage and Environment:

   • Store the device in a dry, cool place away from direct sunlight.
   • Avoid exposing the device to environments exceeding the storage temperature range.

5. Safety Precautions:

   • Always use appropriate safety equipment when handling high voltage circuits.
   • Follow all local regulations and guidelines for electrical safety.

For detailed specifications and additional information, refer to the manufacturer's datasheet.

(For reference only)