Details

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BUY IRFK4J350 https://www.utsource.net/itm/p/6526850.html
ISOLATED BASE POWER HEX PAK ASSEMBLY PARALLEL CHIP CONFIGURATION

Parameter	Symbol	Min	Typ	Max	Unit	Description
Collector-Emitter Voltage	V CES	-	-	500	V	Maximum collector-emitter voltage
Emitter-Collector Voltage	V ECS	-	-	500	V	Maximum emitter-collector voltage
Gate-Emitter Voltage	V GES	-20	-	20	V	Maximum gate-emitter voltage
Continuous Collector Current	I C	-	-	35	A	Maximum continuous collector current
Pulse Collector Current	I CM	-	-	180	A	Maximum pulse collector current
Power Dissipation	P TOT	-	-	350	W	Maximum power dissipation
Junction Temperature	T J	-	-	175	°C	Maximum junction temperature
Storage Temperature	T STG	-55	-	150	°C	Operating temperature range

Instructions for Use:

1. Mounting and Handling:

   • Ensure proper heat sinking to manage the maximum power dissipation.
   • Handle with care to avoid damage to the leads and body.

2. Electrical Connections:

   • Connect the gate, emitter, and collector terminals as per your circuit design.
   • Ensure that the applied voltages do not exceed the specified maximums to prevent device failure.

3. Operating Conditions:

   • Operate within the specified temperature ranges to ensure reliable performance.
   • Keep the junction temperature below the maximum limit to avoid thermal damage.

4. Pulse Operation:

   • For pulse applications, ensure that the pulse width and frequency are compatible with the device's specifications to avoid overheating or exceeding the pulse current rating.

5. Storage:

   • Store in a dry environment within the storage temperature limits to maintain component integrity.

Note: Always refer to the manufacturer’s datasheet for the most accurate and detailed information specific to your application.

(For reference only)