Details

---

BUY 7MBR50NE060 https://www.utsource.net/itm/p/6526885.html
MCU CMOS 18LD .5K EPRM, -40C to +85C, 18-SOIC 300mil, T/R

Parameter	Symbol	Min	Typ	Max	Unit	Conditions
Blocking Voltage	VBR	-	-	600	V	Repetitive Peak Reverse Voltage
Average Rectified Current	IO	-	50	-	A	Tc = 75掳C, f = 50 Hz
Non-Repetitive Peak Surge Current	IFSM	-	400	-	A	tp = 8.3 ms sine half-wave
Junction Temperature	TJ	-	-	175	掳C	Maximum Operating Temperature
Storage Temperature	TSTG	-55	-	175	掳C
Forward Voltage Drop	VF	-	1.1	-	V	IF = 50 A, Tj = 25掳C
Reverse Recovery Time	trr	-	100	-	ns	IF = 50 A, di/dt = 200 A/渭s

Instructions for Use:

1. Mounting and Handling:

   • Ensure proper handling to avoid damage to the device.
   • Mount the device in a way that provides adequate heat dissipation.

2. Electrical Connections:

   • Connect the anode and cathode terminals correctly to avoid reverse polarity which can lead to device failure.

3. Operating Conditions:

   • Do not exceed the maximum blocking voltage (VBR) or average rectified current (IO).
   • Ensure the junction temperature (TJ) does not exceed 175掳C to prevent thermal breakdown.

4. Surge Current Considerations:

   • Be cautious of surge currents; do not exceed the non-repetitive peak surge current (IFSM) as specified.

5. Storage:

   • Store in recommended temperature conditions to ensure reliability and longevity.

6. Forward Voltage Monitoring:

   • Monitor the forward voltage drop (VF) under operating conditions to ensure it remains within acceptable limits.

7. Reverse Recovery:

   • Take into account the reverse recovery time (trr) when designing circuits to ensure compatibility with switching speeds.

(For reference only)