Details

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BUY IXFN130N30 https://www.utsource.net/itm/p/6526891.html
HiPerFET Power MOSFETs Single Die MOSFET

Parameter	Symbol	Value	Unit	Conditions/Notes
Maximum Drain Voltage	VDSS	30	V	Continuous
Maximum Gate-Source Voltage	VGS	卤20	V	Continuous
Maximum Drain Current	ID	130	A	Pulse, Tc = 25掳C
Power Dissipation	PD	670	W	TC = 25掳C
Junction Temperature	TJ	-55 to +175	掳C	Operating Range
Storage Temperature	TSTG	-55 to +150	掳C
Total Device Dissipation	PTOT	480	W	TC = 25掳C, 胃JA = 1.2 K/W

Instructions for Use:

1. Mounting and Handling:

   • Ensure proper heat sinking when operating at high power levels.
   • Handle with care to avoid damage to the sensitive components.

2. Electrical Connections:

   • Verify that all connections are secure and correctly wired according to the circuit diagram.
   • Apply appropriate insulation where necessary to prevent short circuits.

3. Operating Limits:

   • Do not exceed the maximum ratings specified in the table.
   • Pay special attention to the gate-source voltage (VGS) to avoid damaging the device.

4. Thermal Management:

   • Monitor the junction temperature (TJ) to ensure it remains within the operational range.
   • Use adequate cooling methods such as heatsinks or forced air cooling if necessary.

5. Testing and Validation:

   • Perform initial testing under controlled conditions to validate performance parameters.
   • Regularly inspect the device for any signs of wear or malfunction.

6. Storage:

   • Store in a dry, cool place away from direct sunlight and sources of heat.
   • Observe the storage temperature limits to prevent degradation.

For detailed application notes and more specific guidance, refer to the manufacturer's datasheet or technical support documentation.

(For reference only)