Details

---

BUY IXFN80N50 https://www.utsource.net/itm/p/6526914.html
CAP 0.22UF 50V 10% X7R DIP-2 TUBE-PAK S-MIL-PRF-39014/22

Parameter	Symbol	Min	Typ	Max	Unit	Description
Drain-Source On-State Resistance	RDS(on)	-	1.5	-	Ω	At ID = 8A, VGS = 10V
Breakdown Voltage	BVdss	450	-	500	V	Drain-to-Source
Gate Threshold Voltage	VGS(th)	2.0	-	4.0	V	Gate-to-Source
Input Capacitance	Ciss	-	2300	-	pF	At VDS = 25V, VGS = 0V
Total Power Dissipation	PD	-	-	270	W	At TC = 25°C
Junction Temperature	Tj	-	-	175	°C	Maximum Operating Temperature

Instructions for IXFN80N50:

1. Handling Precautions:

   • Use proper ESD protection when handling the device to avoid damage.
   • Avoid exceeding the maximum ratings specified in the table.

2. Mounting:

   • Ensure good thermal management by using a heatsink if necessary.
   • Follow manufacturer guidelines for mounting torque and thermal interface materials.

3. Operating Conditions:

   • Operate within the specified junction temperature range to ensure reliable performance.
   • Keep the gate voltage within the threshold limits to prevent improper switching or damage.

4. Storage:

   • Store in a dry, cool environment to prevent moisture damage.
   • Keep devices in anti-static packaging until ready for use.

5. Testing:

   • Test the device parameters under controlled conditions as specified in the datasheet.
   • Verify the correct operation of the device before integrating into the final application.

6. Application Notes:

   • Refer to the manufacturer’s application notes for detailed information on circuit design and troubleshooting.
   • Consider parasitic elements like lead inductance that can affect high-frequency performance.

(For reference only)