Details
BUY IXFN36N60 https://www.utsource.net/itm/p/6526939.html
HiPerFET Power MOSFET
| Parameter | Symbol | Min | Typ | Max | Unit | Description |
|---|---|---|---|---|---|---|
| Collector-Emitter Voltage | VCES | - | - | 600 | V | Maximum voltage between collector and emitter with gate open. |
| Gate-Emitter Voltage | VGE | -15 | - | 15 | V | Maximum allowable gate-emitter voltage. |
| Continuous Collector Current | ICC | - | - | 36 | A | Maximum continuous collector current. |
| Pulse Collector Current | ICM | - | - | 180 | A | Peak pulse collector current. |
| Power Dissipation | PD | - | - | 220 | W | Maximum power dissipation. |
| Junction Temperature | Tj | -55 | - | 175 | 掳C | Operating junction temperature range. |
| Storage Temperature | Tstg | -55 | - | 150 | 掳C | Storage temperature range. |
Instructions for Use:
- Handling Precautions: The IXFN36N60 is sensitive to electrostatic discharge (ESD). Use appropriate ESD protection measures when handling the device.
- Mounting: Ensure proper heat sinking for devices operating at high currents or power levels to maintain junction temperatures within specified limits.
- Gate Drive: Apply gate drive voltages within the specified range (-15V to +15V) to avoid damaging the gate oxide layer.
- Current Limiting: Do not exceed the maximum continuous collector current (36A) or pulse current (180A) ratings.
- Thermal Considerations: Monitor the junction temperature to ensure it remains within the operational range of -55掳C to 175掳C.
- Storage Conditions: Store in a dry environment within the temperature range of -55掳C to 150掳C to prevent damage.
- Application Specific: Review application-specific data sheets and guidelines for detailed recommendations on using this component in specific circuits or applications.
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