Details

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BUY TT32N1200KOC https://www.utsource.net/itm/p/6526971.html

Parameter	Description	Value	Unit
Part Number	Full part identification	TT32N1200KOC
Type	Type of device	N-Channel MOSFET
Voltage - Drain to Source	Maximum drain-to-source voltage	1200	V
Continuous Drain Current	Maximum continuous drain current	32	A
Power Dissipation	Maximum power dissipation	480	W
Gate Charge	Total gate charge	575	nC
Input Capacitance	Input capacitance at VGS = 0V	6950	pF
Output Capacitance	Output capacitance	115	pF
Turn-on Delay Time	Time from gate threshold to drain source voltage	60	ns
Rise Time	Time for drain current to reach 90% of final value	40	ns
Turn-off Delay Time	Time from gate voltage falling to drain off	34	ns
Fall Time	Time for drain current to fall to 10% of initial	75	ns
Operating Temperature	Junction temperature range	-55 to +150	掳C
Package Type	Package style	TO-247

Instructions:

1. Handling Precautions: The TT32N1200KOC is sensitive to electrostatic discharge (ESD). Use proper ESD protection when handling.
2. Mounting: Ensure that the mounting area and heatsink are clean and free from contaminants. Apply thermal paste between the device and heatsink for optimal heat dissipation.
3. Soldering: Do not exceed a soldering temperature of 260掳C for more than 10 seconds. Allow adequate cooling time post-soldering.
4. Biasing: Ensure correct biasing of the gate relative to the source to prevent damage or improper operation.
5. Storage: Store in a dry, cool place away from direct sunlight and corrosive materials.
6. Testing: Before use, verify the functionality with appropriate test conditions as specified in the datasheet.

For detailed application notes and further technical support, refer to the manufacturer's datasheet or contact the supplier.

(For reference only)