Details

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BUY GA100NA60U https://www.utsource.net/itm/p/6527080.html
INSULATED GATE BIPOLAR TRANSISTOR

Parameter	Symbol	Min	Typ	Max	Unit	Description
Supply Voltage	VDD	8		60	V	Operating supply voltage range
Continuous Drain Current	ID		100		A	Maximum continuous drain current
Peak Pulse Current	Ipp		200		A	Maximum peak pulse current (t < 10 渭s)
Gate Threshold Voltage	Vth	2.0	3.5	5.0	V	Gate threshold voltage
On-State Resistance	Rds(on)		1.8		惟	On-state resistance at VGS = 10V, ID = 10A
Total Power Dissipation	Ptot			100	W	Maximum total power dissipation
Junction Temperature	Tj	-40		150	掳C	Operating junction temperature range
Storage Temperature	Tstg	-55		150	掳C	Storage temperature range

Instructions for GA100NA60U:

1. Power Supply Connection:

   • Ensure the supply voltage (VDD) is within the specified range of 8V to 60V.

2. Current Handling:

   • Do not exceed the continuous drain current (ID) of 100A or the peak pulse current (Ipp) of 200A for pulses shorter than 10 渭s.

3. Gate Control:

   • Apply a gate voltage (VGS) that is sufficient to ensure the gate threshold voltage (Vth) is exceeded to turn on the device properly. The typical Vth is around 3.5V but can vary between 2.0V and 5.0V.

4. Thermal Management:

   • Keep the junction temperature (Tj) within the operational range (-40掳C to 150掳C). Use appropriate heat sinks if necessary to manage heat dissipation and stay below the maximum total power dissipation (Ptot) of 100W.

5. Storage Conditions:

   • Store the device in an environment where the temperature does not drop below -55掳C or rise above 150掳C.

6. Handling Precautions:

   • Follow standard ESD (Electrostatic Discharge) precautions when handling the device to prevent damage from static electricity.

7. Application Considerations:

   • Ensure that the application circuitry provides adequate protection against overvoltage and overcurrent conditions to safeguard the device.

(For reference only)