Details

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BUY SKD100GAL123D2 https://www.utsource.net/itm/p/6527117.html
Power Bridge Rectifiers

Parameter	Description	Value	Unit
Part Number	Full part identification	SKD100GAL123D2	-
Type	Device type	MOSFET	-
Package	Encapsulation type	D2PAK	-
VDS	Drain-to-Source Voltage	100	V
RDS(on)	On-State Resistance at specified conditions	4.5	m惟
ID	Continuous Drain Current	68	A
PD	Total Power Dissipation	100	W
Junction Temperature	Maximum Operating Temperature of the Junction	175	掳C
Gate Charge	Total Gate Charge	98	nC
Input Capacitance	Capacitance between gate and source	1530	pF
Body Diode VF	Forward Voltage of Body Diode	0.8	V

Instructions for Use:

1. Mounting: Ensure the device is mounted on a suitable heatsink to manage heat dissipation effectively, especially under high-power conditions.
2. Soldering: Follow standard soldering practices for surface mount devices. Preheat components to avoid thermal shock.
3. Handling: Handle with care to prevent damage from electrostatic discharge (ESD). Use appropriate ESD protection measures.
4. Storage: Store in a dry environment away from direct sunlight and extreme temperatures.
5. Operating Conditions: Operate within specified voltage and current limits to ensure reliable performance and longevity.
6. Testing: Before deploying in critical applications, test the device under actual operating conditions to validate performance.

For detailed application notes and more specific guidelines, refer to the manufacturer's datasheet or technical support documentation.

(For reference only)