Details

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BUY E180NE10 https://www.utsource.net/itm/p/6527232.html
N-CHANNEL 100V - 4.5 mohm - 180A ISOTOP STripFET] POWER MOSFET

Parameter	Description	Value
Part Number	Unique identifier for the component	E180NE10
Type	Type of component	N-Channel MOSFET
VDS (Max)	Maximum Drain-to-Source Voltage	100 V
VGS (Max)	Maximum Gate-to-Source Voltage	卤20 V
ID (Max)	Maximum Drain Current	1.8 A
RDS(on) (Max)	On-State Resistance at specified conditions	0.75 惟
Power Dissipation	Maximum Power Dissipation at Tc = 25掳C	3.6 W
Operating Temperature Range	Junction Temperature Range	-55掳C to +150掳C
Package	Type of package	TO-220

Instructions:

1. Installation: Ensure the MOSFET is mounted on a heatsink if operating near its maximum power dissipation limits.
2. Handling: Handle with care to avoid damage from electrostatic discharge (ESD). Use proper ESD protection equipment.
3. Connection: Connect the drain, source, and gate terminals correctly as per your circuit design. Refer to the datasheet diagram for pin configuration.
4. Testing: Before deploying in a live application, test the MOSFET in a controlled environment to ensure it meets performance expectations.
5. Storage: Store in a dry, cool place away from direct sunlight and sources of heat.

(For reference only)