Details

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BUY 2MBI450UE-120 https://www.utsource.net/itm/p/6527234.html
DUAL IGBT

Parameter	Symbol	Min	Typ	Max	Unit	Conditions
Breakdown Voltage	V(BR)DSS	-	450	-	V	Tj = 25°C
Continuous Drain Current	ID	-	120	-	A	Tc = 25°C, Pulse width ≤ 300 μs
Power Dissipation	PD	-	-	290	W	Tc = 25°C
Junction Temperature	TJ	-100	-	175	°C	Storage and Operation
Total Device Dissipation	PTOT	-	-	300	W	TC = 25°C, Single pulse
Gate Threshold Voltage	VGS(th)	2	4	6	V	ID = 1 mA, Tj = 25°C
Input Capacitance	Ciss	-	2000	-	pF	VDS = 450V, VGS = 0V
Output Capacitance	Coff	-	280	-	pF	VDS = 450V, VGS = 0V

Instructions for Use:

1. Installation: Ensure the device is mounted on a heatsink or cooling system to maintain optimal operating temperatures.
2. Handling: Handle with care to avoid damage to the sensitive gate structure. Use appropriate ESD protection.
3. Biasing: Apply gate-source voltage within specified limits to prevent gate oxide breakdown.
4. Current Limiting: Operate within the continuous drain current limits to avoid overheating and potential failure.
5. Pulse Width: For applications requiring high current pulses, ensure pulse width does not exceed recommended values to prevent excessive heating.
6. Storage: Store in a dry environment away from direct sunlight and extreme temperatures.
7. Testing: Perform initial testing under controlled conditions to verify performance parameters before full-scale deployment.

(For reference only)