Details

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BUY MG30G6EL2 https://www.utsource.net/itm/p/6527235.html

Parameter	Description	Value	Unit
Part Number	Product identifier	MG30G6EL2
Type	Device type	MOSFET
Package	Encapsulation type	TO-252
Drain-Source Voltage	Maximum voltage between drain and source	30	V
Gate-Source Voltage	Maximum voltage between gate and source	卤12	V
Continuous Drain Current	Maximum continuous current through the drain	6.8	A
Power Dissipation	Maximum power dissipation	1.4	W
Junction Temperature	Maximum operating temperature of the junction	-55 to 175	掳C
Gate Charge	Total gate charge	29	nC
Input Capacitance	Capacitance between gate and source	500	pF

Instructions for Use:

1. Handling Precautions: The MG30G6EL2 is sensitive to electrostatic discharge (ESD). Use appropriate ESD protection measures during handling.
2. Mounting: Ensure proper heat sinking if operating near maximum power dissipation limits.
3. Operating Conditions: Operate within specified voltage and current limits to avoid damage.
4. Storage: Store in a dry, cool place away from direct sunlight and sources of heat.
5. Soldering: Follow standard soldering practices for surface mount devices. Avoid excessive heat to prevent damage.
6. Testing: Before installing into final applications, test the device under typical operating conditions to ensure functionality.

(For reference only)