Details

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BUY CM20MD1-12H https://www.utsource.net/itm/p/6527260.html
MEDIUM POWER SWITCHING USE FLAT-BASE TYPE, INSULATED TYPE

Parameter	Description	Value	Unit
Part Number	Component Identifier	CM20MD1-12H	-
Type	Device Type	MOSFET	-
Package	Encapsulation Type	TO-252 (DPAK)	-
Vds	Drain-to-Source Voltage	12	V
Id	Continuous Drain Current	20	A
Rds(on)	On-State Resistance	4.5	m惟
Vgs(th)	Gate Threshold Voltage	2 to 4	V
Power Dissipation	Maximum Power Loss	1.6	W
Operating Temperature	Junction Temperature Range	-55 to 150	掳C

Instructions:

1. Installation: Ensure the device is mounted on a heatsink if operating at high power levels to maintain junction temperature within specified limits.
2. Handling: Use appropriate ESD protection measures during handling and installation to prevent damage to the MOSFET.
3. Soldering: Follow recommended soldering profiles for TO-252 packages to avoid thermal stress on the component.
4. Testing: Verify gate threshold voltage and on-resistance parameters post-installation to ensure proper functionality.
5. Application: Suitable for switching applications in power supplies, motor control, and general-purpose circuits where low on-resistance and high current capability are required.

(For reference only)