Details

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BUY PP30012HS6A https://www.utsource.net/itm/p/6527270.html

Parameter	Description
Part Number	PP30012HS6A
Type	MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor)
Configuration	N-Channel
VDS (Max Drain-Source Voltage)	60V
RDS(on) (On-State Resistance)	1.2 m惟 @ VGS=10V, ID=40A
ID (Continuous Drain Current)	40A @ Tc=25掳C
PD (Total Power Dissipation)	180W @ TC=25掳C
Package Type	TO-247
Operating Temperature Range	-55掳C to +175掳C
Gate Charge (Qg)	120 nC
Input Capacitance (Ciss)	4400 pF @ VDS=20V, f=1MHz
Output Capacitance (Coss)	450 pF @ VDS=20V, f=1MHz
Reverse Transfer Capacitance (Crss)	450 pF @ VDS=20V, f=1MHz
Thermal Resistance (R胃JC)	0.5掳C/W

Instructions for Use:

1. Handling and Storage:

   • Store in a dry, cool place.
   • Handle with care to avoid damage to the leads and body.

2. Mounting:

   • Ensure proper heat sinking when operating near maximum power dissipation.
   • Tighten screws securely but do not exceed the maximum torque specified for the package.

3. Electrical Connections:

   • Verify all connections are correct before applying power.
   • Use insulated tools to prevent short circuits.

4. Operation:

   • Operate within the specified temperature and voltage limits to ensure reliability.
   • Monitor temperature and current to avoid exceeding device ratings.

5. Safety:

   • Always follow safety guidelines when working with electrical components.
   • Ensure proper grounding of equipment.

For detailed specifications and additional information, refer to the manufacturer's datasheet.

(For reference only)