Details

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BUY PK55FG80 https://www.utsource.net/itm/p/6527272.html
THYRISTOR MODULE

Parameter	Description	Value	Unit
Part Number	Device Part Number	PK55FG80	-
Type	Device Type	MOSFET	-
Configuration	Channel Configuration	N-Channel	-
Voltage (Vds)	Drain-Source Voltage	80	V
Current (Id)	Continuous Drain Current	55	A
Power Dissipation	Maximum Power Dissipation	120	W
Rds(on)	On-State Resistance	4.5	m惟
Gate Charge	Total Gate Charge	73	nC
Input Capacitance	Input Capacitance	1350	pF
Operating Temperature	Junction Temperature Range	-55 to +150	掳C

Instructions for Use:

1. Handling Precautions:

   • Ensure ESD precautions are taken during handling.
   • Avoid exposing the device to excessive heat or mechanical stress.

2. Mounting:

   • Follow manufacturer guidelines for mounting and soldering.
   • Ensure proper thermal management, especially given the power dissipation capability.

3. Operating Conditions:

   • Operate within specified voltage and current limits.
   • Monitor junction temperature to prevent overheating.

4. Storage:

   • Store in a dry, cool place away from direct sunlight.
   • Keep in original packaging until ready for use to protect against static damage.

5. Testing:

   • Verify all connections before applying power.
   • Test in a controlled environment initially to ensure correct operation.

For detailed specifications and further instructions, refer to the official datasheet provided by the manufacturer.

(For reference only)