Details

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BUY HFA80FA120 https://www.utsource.net/itm/p/6527382.html
Ultrafast, Soft Recovery Diode

Parameter	Description	Value	Unit
Part Number	Device part number	HFA80FA120	-
Type	Device type	N-Channel MOSFET	-
VDS	Drain-to-Source Voltage	80	V
VGS	Gate-to-Source Voltage	卤20	V
ID	Continuous Drain Current	120	A
RDS(on)	On-State Resistance at VGS = 10V	4.5	m惟
Power Dissipation	Maximum Power Dissipation	300	W
Junction Temperature	Maximum Operating Junction Temperature	175	掳C
Package	Package Type	TO-247	-

Instructions for Use:

1. Handling Precautions: Handle the device with care to avoid damage to the pins and package. Avoid exposure to high temperatures and humidity.
2. Mounting: Ensure proper mounting on a heatsink if operating near maximum power dissipation to maintain safe junction temperature.
3. Electrical Connections: Verify all connections are secure and correct before applying power. Ensure the gate is properly driven relative to the source.
4. Thermal Management: Monitor the device's temperature during operation, especially under heavy loads or in high ambient temperatures.
5. Storage: Store in a dry, cool environment away from direct sunlight and corrosive substances.

For detailed application notes and further technical information, refer to the datasheet provided by the manufacturer.

(For reference only)