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BUY SKM40GD101D https://www.utsource.net/itm/p/6527436.html
SEMITRANS IGBT Modules New Range

Parameter	Symbol	Min	Typ	Max	Unit	Description
Collector-Emitter Voltage	V CES			600	V	Maximum voltage between collector and emitter.
Emitter-Collector Voltage	V ECS			600	V	Maximum voltage between emitter and collector.
Gate-Emitter Voltage	V GES	-15		15	V	Maximum gate-emitter voltage.
Continuous Collector Current	I C		40		A	Maximum continuous current through the collector.
Peak Collector Current	I CM		100		A	Maximum peak current through the collector.
Power Dissipation	P T		200		W	Maximum power dissipation.
Junction Temperature	T j	-50		175	°C	Operating junction temperature range.
Storage Temperature	T stg	-55		150	°C	Storage temperature range.

Instructions for Use:

1. Handling Precautions:

   • Avoid exceeding the maximum ratings specified in the table.
   • Use appropriate heat sinks to manage thermal conditions, especially when operating near maximum power dissipation.

2. Installation:

   • Ensure proper mounting of the device to a heatsink if necessary.
   • Follow recommended PCB layout guidelines to ensure optimal performance and reliability.

3. Operation:

   • Keep the junction temperature within the specified range to prevent thermal damage.
   • Monitor the gate-emitter voltage to avoid potential latch-up or breakdown conditions.

4. Storage:

   • Store in a dry, cool place within the specified storage temperature range.
   • Protect from electrostatic discharge (ESD) by using proper packaging and handling techniques.

5. Testing:

   • During testing and evaluation, apply voltages and currents gradually to avoid sudden stress on the device.
   • Verify all connections are secure and correct before applying power.

For detailed application notes and further technical support, refer to the manufacturer’s documentation or website.

(For reference only)