Details

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BUY MG75Q2YS11 https://www.utsource.net/itm/p/6527492.html
N CHANNEL IGBT (HIGH POWER SWITCHING, MOTOR CONTROL APPLICATIONS)

Parameter	Description	Value	Unit
Part Number	Product part number	MG75Q2YS11	-
Type	Device type	MOSFET	-
Package	Package type	TO-252 (DPAK)	-
VDS	Drain-source voltage	75	V
VGS(th)	Gate-source threshold voltage	1.0 to 2.5	V
RDS(on) @ VGS=10V	On-resistance at gate-source voltage of 10V	40	m惟
ID	Continuous drain current	28	A
PD	Total power dissipation	3.1	W
TJ	Junction temperature range	-55 to 150	掳C

Instructions for Use:

1. Installation:

   • Ensure the device is handled with care to avoid damage to the leads or body.
   • Mount the device on a suitable heatsink if operating near maximum power dissipation limits.

2. Electrical Connections:

   • Connect the drain, source, and gate terminals correctly as per your circuit design.
   • Ensure that the gate drive circuit can supply sufficient voltage to fully turn on the MOSFET.

3. Operating Conditions:

   • Do not exceed the maximum ratings specified in the table.
   • Operate within the recommended junction temperature range to ensure reliability.

4. Storage:

   • Store in a dry, cool place away from direct sunlight.
   • Handle with ESD (Electrostatic Discharge) precautions to prevent damage.

5. Testing:

   • Before installing into final circuits, test the device parameters to ensure they meet specifications.
   • Use appropriate safety measures when testing high voltage components.

(For reference only)