Details

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BUY MG300Q1US41 https://www.utsource.net/itm/p/6527549.html
HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS

Parameter	Description	Value/Range	Unit
Device Name	Automotive-grade 300V N-channel MOSFET	MG300Q1US41	-
Drain-Source Voltage	Maximum drain-to-source voltage	300	V
Continuous Drain Current	Continuous drain current at 25°C ambient temperature	78	A
Pulse Drain Current	Peak pulse drain current	360	A
Gate-Source Voltage	Maximum gate-to-source voltage	±20	V
Rds(on)	On-resistance at Vgs=10V	2.9	mΩ
Input Capacitance	Input capacitance	1400	pF
Total Power Dissipation	Maximum total power dissipation (at Tc=25°C)	210	W
Junction Temperature	Maximum junction temperature	175	°C
Storage Temperature	Operating and storage temperature range	-55 to 175	°C
Package Type	Package type	TO-220	-

Instructions for Use:

1. Handling Precautions: This device is sensitive to electrostatic discharge (ESD). Handle with care and use appropriate ESD protection.
2. Mounting: Ensure proper heat sinking when operating at high currents or power levels to maintain junction temperature within specified limits.
3. Gate Drive: Apply gate drive voltages within the specified range to prevent damage or unreliable operation.
4. Storage and Operation Temperature: Operate and store the device within the specified temperature range to ensure reliable performance.
5. Pulse Current Handling: For applications involving pulse currents, ensure that the pulse duration and frequency are such that the average power dissipation remains within the device’s limits.
6. PCB Layout: Follow recommended PCB layout guidelines to minimize parasitic inductances and optimize thermal performance.

(For reference only)