Details

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BUY DFA200CB80 https://www.utsource.net/itm/p/6527582.html
THREE PHASE DIODE + THYRISTOR

Parameter	Description	Value
Part Number	Device identifier	DFA200CB80
Type	Device classification	MOSFET
Package	Physical package type	TO-252
VDS (Max)	Maximum Drain-to-Source Voltage	200V
VGS (Max)	Maximum Gate-to-Source Voltage	卤20V
ID (Continuous)	Continuous Drain Current	8A
RDS(on) at VGS=10V	On-Resistance at specified Gate Voltage	80m惟
Power Dissipation	Maximum power dissipation	4.6W
Junction Temperature	Maximum operating temperature of the semiconductor junction	-55掳C to +150掳C
Storage Temperature	Temperature range for storage	-55掳C to +150掳C

Instructions:

1. Installation: Ensure that the DFA200CB80 is soldered onto a PCB with proper heat sinking if necessary, especially when operating near its maximum current and voltage ratings.
2. Handling: Use appropriate ESD protection measures during handling to avoid damage to the MOSFET.
3. Testing: Before incorporating into final designs, test the device under conditions similar to those expected in operation.
4. Operating Conditions: Do not exceed the maximum ratings listed in the table to prevent damage or failure of the device.
5. Thermal Management: Monitor the junction temperature to ensure it remains within the operational limits. Consider using a heatsink if the device will be operating at high currents or in high ambient temperatures.
6. Gate Drive: Apply gate voltages within the specified range to avoid damaging the gate oxide layer.

(For reference only)