Details

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BUY MG200Q2YS9 https://www.utsource.net/itm/p/6527583.html
N CHANNEL IGBT (HIGH POWER SWITCHING, MOTOR CONTROL APPLICATIONS)

Parameter	Description	Value
Part Number	Full part identification	MG200Q2YS9
Type	Device type	MOSFET
Configuration	Channel configuration	N-Channel
VDS (Drain-Source Volt)	Maximum Drain-Source voltage	200V
VGS (Gate-Source Volt)	Maximum Gate-Source voltage	卤20V
ID (Continuous Current)	Continuous Drain current	9A
PD (Power Dissipation)	Maximum power dissipation	175W
RDS(on)	On-state resistance at specified VGS and ID	0.065惟 (at VGS=10V, ID=8A)
Package Type	Housing type	TO-247
Operating Temperature	Junction temperature range	-55掳C to +150掳C

Instructions for Use:

1. Installation:

   • Ensure the device is mounted on a heatsink if operating near maximum power dissipation to maintain safe operating temperatures.
   • Follow proper anti-static precautions when handling to prevent damage to the MOSFET.

2. Circuit Design:

   • Ensure that the drain-source voltage does not exceed 200V to avoid breakdown.
   • The gate-source voltage should be kept within 卤20V to prevent gate oxide damage.
   • For optimal performance, keep the operating junction temperature within the specified range (-55掳C to +150掳C).

3. Testing:

   • Test the device in a controlled environment with appropriate current and voltage limits before integrating into final applications.
   • Verify the RDS(on) value under operational conditions to ensure it matches expected performance.

4. Storage:

   • Store in a dry, cool place away from direct sunlight and sources of heat.
   • Keep devices in anti-static packaging until ready for use.

(For reference only)