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IGBT(1200V 50A)
| Parameter | Symbol | Min | Typical | Max | Unit | Conditions |
|---|---|---|---|---|---|---|
| Forward Voltage | VF | - | 1.7 | 2.0 | V | @ IF = 50A, Tj = 25掳C |
| Reverse Recovery Time | trr | - | 45 | 60 | ns | @ IF = 50A, di/dt = 100A/渭s |
| Continuous Current | IF(AV) | - | - | 50 | A | @ Tc = 25掳C |
| Peak Surge Current | IFSM | - | - | 300 | A | @ tp = 10ms, non-repetitive |
| Junction Temperature | Tj | - | - | 150 | 掳C | Maximum Operating |
| Storage Temperature | Tstg | -40 | - | 150 | 掳C | - |
Instructions for Use:
Installation: Ensure that the device is installed in a well-ventilated area to facilitate heat dissipation. Proper mounting and heatsinking are crucial for maintaining junction temperature within specified limits.
Current Handling: Do not exceed the continuous current rating of 50A or peak surge current of 300A. For applications requiring higher currents, consider using multiple devices in parallel.
Voltage Considerations: The forward voltage drop should be accounted for in system power calculations. At typical operating conditions, expect a voltage drop around 1.7V to 2.0V.
Reverse Recovery: Be aware of the reverse recovery time when designing switching circuits. This parameter can affect the performance and efficiency of the circuit.
Temperature Management: Monitor the junction temperature closely. Exceeding the maximum junction temperature can lead to premature failure. Ensure the ambient and storage temperatures remain within the specified range.
Handling Precautions: Handle the device with care to avoid damage from electrostatic discharge (ESD). Use appropriate ESD protection measures during handling and installation.
Testing: Before deploying the device in a live application, conduct thorough testing under controlled conditions to ensure it meets all operational requirements.
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