FMG2G150US60E

FMG2G150US60E


Specifications
SKU
6527599
Details

BUY FMG2G150US60E https://www.utsource.net/itm/p/6527599.html
600V, 150A IGBT Module Molding Type; Package: 7PM-GA; No of Pins: 7; Container: Bulk
Parameter Symbol Conditions Min Typ Max Unit
Breakdown Voltage V(BR)DSS Tj = 25掳C - - 600 V
Forward Transconductance gfs VGS = 10V, ID = 10A 4.0 - - S
Input Capacitance Ciss VDS = 300V, VGS = 0V - 1280 - pF
Output Capacitance Coff VDS = 300V, VGS = 0V - 40 - pF
Reverse Transfer Capacitance Crss VDS = 300V, VGS = 0V - 97 - pF
Total Gate Charge Qg VGS = 卤15V, IDS = 10A - 110 - nC
Threshold Voltage Vth ID = 1mA, IDS = 250渭A 2.0 3.0 4.0 V
On-State Resistance RDS(on) VGS = 10V, ID = 10A - 150 - m惟

Instructions for FMG2G150US60E

  1. Handling Precautions:

    • Use appropriate ESD protection measures when handling the device.
    • Avoid exceeding the maximum ratings to prevent damage.
  2. Mounting and Storage:

    • Store in a dry environment to avoid moisture-related issues.
    • Ensure proper heat sinking if operating at high currents or power levels.
  3. Application Notes:

    • For optimal performance, ensure gate drive voltage is within specified limits.
    • Consider using a snubber circuit if switching high-frequency signals to reduce noise.
  4. Testing and Validation:

    • Verify all connections are secure before applying power.
    • Perform initial tests under controlled conditions to validate operation parameters.
  5. Safety Guidelines:

    • Always follow local safety regulations when working with electrical circuits.
    • Disconnect power before making any adjustments or repairs.
(For reference only)

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