Details

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BUY CM600HA-12H https://www.utsource.net/itm/p/6527602.html
HIGH POWER SWITCHING USE INSULATED TYPE

Parameter	Description
Part Number	CM600HA-12H
Type	MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor)
Configuration	N-Channel
VDS (Drain-Source Voltage)	600 V
RDS(on) (On-State Resistance)	12 m惟 at VGS = 10 V, ID = 25 A
ID (Continuous Drain Current)	25 A at Tc = 25掳C
PD (Total Power Dissipation)	175 W at Tc = 25掳C
fT (Transit Frequency)	4.8 MHz
Qg (Total Gate Charge)	90 nC
Package Type	TO-247
Operating Temperature Range	-55掳C to +175掳C
Storage Temperature Range	-55掳C to +150掳C

Instructions for Use:

1. Handling Precautions:

   • Avoid exposing the device to excessive mechanical stress.
   • Handle with care to prevent damage to leads and package.

2. Mounting:

   • Ensure proper heat sinking if operating near maximum power dissipation.
   • Tighten screws securely but do not exceed recommended torque values.

3. Electrical Connections:

   • Verify correct polarity before applying voltage.
   • Keep wiring as short as possible to minimize inductance.

4. Operational Guidelines:

   • Do not exceed the absolute maximum ratings.
   • Ensure adequate cooling for continuous operation at high currents or voltages.

5. Testing:

   • Perform initial tests under controlled conditions.
   • Monitor temperature and performance parameters regularly during testing.

6. Storage:

   • Store in a dry, cool environment away from direct sunlight.
   • Follow anti-static precautions to protect against ESD damage.

For detailed specifications and application notes, refer to the manufacturer's datasheet.

(For reference only)