Details

---

BUY PM100CFE060 https://www.utsource.net/itm/p/6527622.html
FLAT-BASE TYPE INSULATED PACKAGE

Parameter	Description	Value
Part Number	Product identifier	PM100CFE060
Type	Type of device	MOSFET
Package	Package type	TO-220
Vds (V)	Drain-to-source voltage	100V
Id (A)	Continuous drain current	60A
Rds(on) (m惟)	On-state resistance at specified conditions	4.5 m惟
Qg (nC)	Total gate charge	139 nC
Vgs(th) (V)	Gate threshold voltage	2 to 4V
Power Dissipation (W)	Maximum power dissipation	117W
Operating Temperature (掳C)	Junction temperature range	-55 to +175掳C

Instructions for Use:

1. Handling Precautions: Handle the PM100CFE060 with care to avoid damage to the leads and body. Use proper anti-static precautions to prevent damage from electrostatic discharge.
2. Mounting: Ensure that the device is mounted securely on a suitable heatsink to manage heat dissipation effectively, especially under high-power conditions.
3. Electrical Connections: Verify all electrical connections are correct before applying power. Ensure the source, gate, and drain connections are properly made.
4. Biasing: Apply the correct biasing voltages to the gate relative to the source to ensure the MOSFET operates within its safe operating area.
5. Testing: After assembly, perform initial testing at low power levels to confirm proper operation before proceeding to full load conditions.
6. Storage: Store in a dry, cool place away from direct sunlight and sources of heat or moisture when not in use.

For detailed specifications and application notes, refer to the datasheet provided by the manufacturer.

(For reference only)