Details

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BUY 7MBP75RE120 https://www.utsource.net/itm/p/6527707.html
IGBT-IPM

Parameter	Symbol	Min	Typ	Max	Unit	Conditions
Blocking Voltage	V(BR)DSS	-	1200	-	V
Continuous Drain Current	ID	-	7	-	A	Tc = 25掳C
Continuous Drain Current	ID	-	4.5	-	A	Tc = 80掳C
On-State Resistance	RDS(on)	-	75	-	m惟	VGS = 10V, ID = 7A, Tc = 25掳C
Gate Charge	QG	-	60	-	nC
Input Capacitance	Ciss	-	2300	-	pF	VDS = 10V
Output Capacitance	Coss	-	450	-	pF	VDS = 10V
Reverse Transfer Capacitance	Crss	-	90	-	pF	VDS = 10V

Instructions for Use:

1. Handling Precautions: The 7MBP75RE120 is sensitive to electrostatic discharge (ESD). Handle with appropriate ESD precautions.
2. Mounting: Ensure proper thermal management when mounting the device. Adequate heatsinking may be required depending on operating conditions.
3. Voltage Ratings: Do not exceed the maximum blocking voltage of 1200V. Ensure that the circuit design accounts for potential voltage spikes.
4. Current Handling: Operate within the specified continuous drain current limits. At higher temperatures, derate the current as per the datasheet specifications.
5. Gate Drive: Use a gate drive voltage of at least 10V to ensure the MOSFET operates in its linear region and achieves the specified RDS(on).
6. Capacitance Considerations: Be mindful of the input, output, and reverse transfer capacitances during circuit design, especially in high-frequency applications.
7. Storage: Store in a dry environment and avoid exposure to moisture which can affect the device's performance.

For detailed specifications and additional information, refer to the manufacturer's datasheet.

(For reference only)