Details

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BUY MG100Q2YS51 https://www.utsource.net/itm/p/6527835.html
UltraThin Wireless Access Point, Dual 802.11 a/b/g Radios; Approval Categories:UL, EN & IEC: 60950-I; EMC FCC Part 15 Class B, EN 301 489-1-17; Data Rate Max:48Mbps; External Depth:1.8"; External Height:4.2"; External Width:7.7" RoHS Compliant: Yes

Parameter	Description
Part Number	MG100Q2YS51
Type	MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor)
Configuration	N-Channel
Drain Source Voltage	100V
Continuous Drain Current	2A at 25掳C, derated above this temperature
Power Dissipation	1.4W (at Tc = 25掳C)
Gate-Source Voltage	卤20V
Gate Charge	27nC
Input Capacitance	460pF
Output Capacitance	380pF
Reverse Transfer Capacitance	220pF
Operating Temperature Range	-55掳C to +150掳C
Package	TO-252 (DPAK)

Instructions for Use:

1. Handling Precautions: Handle with care to avoid damage to the device. Avoid exposing the device to high temperatures or moisture.
2. Mounting: Ensure proper mounting on a heat sink if operating near maximum power dissipation limits.
3. Soldering: Use standard soldering techniques suitable for surface mount devices. Avoid excessive heat during soldering.
4. Electrostatic Discharge (ESD) Protection: Handle with ESD precautions as the device is sensitive to static electricity.
5. Biasing and Operation: Ensure that the gate-source voltage does not exceed the specified limits to prevent damage.
6. Thermal Considerations: Monitor the junction temperature to ensure it remains within safe operational limits.
7. Storage: Store in a dry, cool place away from direct sunlight and sources of heat.

(For reference only)