Details

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BUY RM30CZ-H https://www.utsource.net/itm/p/6527913.html
MEDIUM POWER GENERAL USE INSULATED TYPE

Parameter	Description	Value
Part Number	Product Identifier	RM30CZ-H
Type	Device Type	MOSFET
Package	Encapsulation Type	TO-220
Drain Source Voltage (Vds)	Maximum Voltage between Drain and Source	30 V
Continuous Drain Current (Id)	Max Continuous Current through Drain	56 A at 25掳C, 41 A at 70掳C
Gate Source Voltage (Vgs)	Max Voltage between Gate and Source	卤20 V
On-State Resistance (Rds(on))	Resistance when fully on	4.9 m惟 at Vgs=10V, Id=40A
Total Power Dissipation (Ptot)	Max Power Dissipation	107 W
Junction Temperature (Tj)	Operating Temperature Range of Junction	-55掳C to +175掳C
Storage Temperature (Tstg)	Storage Temperature Range	-55掳C to +150掳C
Gate Charge (Qg)	Total Gate Charge	134 nC

Instructions for Use:

1. Handling Precautions:

   • Handle the device with care to avoid damage to the pins.
   • Avoid exposure to high temperatures and humidity during storage.

2. Installation:

   • Ensure proper heat sinking to manage the junction temperature within operational limits.
   • Follow the manufacturer's guidelines for mounting torque on screws.

3. Electrical Connections:

   • Connect the drain, source, and gate terminals correctly according to the circuit diagram.
   • Apply appropriate gate drive voltage to ensure reliable switching performance.

4. Operational Guidelines:

   • Do not exceed the maximum ratings listed in the table.
   • Operate within specified temperature ranges to ensure longevity and reliability.
   • Regularly inspect connections and cooling systems to prevent overheating.

5. Testing:

   • Perform initial testing under controlled conditions to validate operation.
   • Monitor performance parameters like temperature and current regularly.

For detailed specifications and application notes, refer to the official datasheet provided by the manufacturer.

(For reference only)