Details

---

BUY APT30M40JVR https://www.utsource.net/itm/p/6527922.html
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

Parameter	Description	Value
Part Number	Device Identifier	APT30M40JVR
Type	Device Type	MOSFET
Configuration	Channel Type	N-Channel
VDS (V)	Drain-to-Source Voltage	40V
ID (A)	Continuous Drain Current	30A
RDS(on) (m惟)	On-State Resistance	4.5 m惟
VGS(th) (V)	Gate Threshold Voltage	2.1V to 4V
Package	Housing Type	TO-220
Operating Temp.	Junction Temperature Range	-55掳C to 150掳C

Instructions for Use:

1. Handling Precautions:

   • Handle the device with care to avoid damage from electrostatic discharge (ESD). Use proper ESD protection equipment.

2. Mounting:

   • Ensure the mounting surface is clean and free of contaminants.
   • Apply thermal paste if necessary for optimal heat dissipation.

3. Electrical Connections:

   • Connect the drain, gate, and source terminals according to your circuit diagram.
   • Verify all connections are secure and correct before applying power.

4. Heat Management:

   • For high current applications, ensure adequate cooling measures are in place, such as heatsinks or fans.

5. Testing:

   • After installation, test the device under controlled conditions to ensure it operates within specified parameters.

6. Storage:

   • Store in a dry, cool environment away from direct sunlight and sources of heat.

(For reference only)