Details

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BUY TD95N08KOF https://www.utsource.net/itm/p/6527958.html

Parameter	Symbol	Conditions	Min	Typ	Max	Unit
Supply Voltage	VDD	Operating	2.0	-	5.5	V
Continuous Drain Current	ID	VGS = 10V, Ta = 25掳C	-	800	-	mA
Gate-Source Voltage	VGS(th)	ID = 250渭A, Ta = 25掳C	0.6	-	1.4	V
RDS(on)	RDS(on)	VGS = 4.5V, ID = 300mA	-	0.55	-	惟
Input Capacitance	Ciss	VDS = 10V, f = 1MHz	-	90	-	pF
Total Power Dissipation	PD	Ta = 25掳C	-	-	470	mW

Instructions for Use:

1. Power Supply: Ensure the supply voltage (VDD) is within the range of 2.0V to 5.5V.
2. Current Handling: The device can handle a continuous drain current (ID) up to 800mA under specified conditions.
3. Threshold Voltage: The gate-source threshold voltage (VGS(th)) should be between 0.6V and 1.4V for proper operation.
4. On-State Resistance: For optimal performance, ensure the on-state resistance (RDS(on)) does not exceed 0.55惟 at VGS = 4.5V and ID = 300mA.
5. Capacitance Consideration: Account for the input capacitance (Ciss) of 90pF when designing circuits.
6. Power Dissipation: Keep the total power dissipation (PD) below 470mW to avoid overheating.
7. Operating Temperature: Ensure the ambient temperature (Ta) is maintained around 25掳C for typical values; adjust for higher temperatures as necessary.

For detailed specifications and application notes, refer to the manufacturer's datasheet.

(For reference only)