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BUY 7MBP150RA120 https://www.utsource.net/itm/p/6527993.html
IGBT-IPM1200V/150A

Parameter	Symbol	Min	Typ	Max	Unit	Description
Breakdown Voltage	V(BR)DSS	-	150	-	V	Drain-Source Breakdown Voltage
Continuous Drain Current	ID	-	-	120	A	Continuous Drain Current
Power Dissipation	PD	-	-	240	W	Total Power Dissipation
Junction Temperature	TJ	-25	-	175	掳C	Operating Junction Temperature Range
Gate Charge	QG	-	60	-	nC	Total Gate Charge
Input Capacitance	Ciss	-	2300	-	pF	Input Capacitance at VDS = 15V
Output Capacitance	Coss	-	80	-	pF	Output Capacitance at VDS = 15V
Reverse Transfer Capacitance	Crss	-	60	-	pF	Reverse Transfer Capacitance
Turn-on Delay Time	td(on)	-	35	-	ns	Turn-on Delay Time
Rise Time	tr	-	25	-	ns	Rise Time
Turn-off Delay Time	td(off)	-	40	-	ns	Turn-off Delay Time
Fall Time	tf	-	20	-	ns	Fall Time

Instructions for Use:

1. Installation: Ensure the device is mounted on a heatsink or PCB with adequate thermal management to handle the specified power dissipation.
2. Biasing: Apply gate voltage carefully within the specified limits to avoid damage to the MOSFET.
3. Temperature Monitoring: Keep the junction temperature within the operating range (-25掳C to 175掳C) to ensure reliable operation.
4. Capacitance Considerations: Account for the input, output, and reverse transfer capacitances in high-frequency applications to maintain stability.
5. Switching Characteristics: Utilize the provided switching times (turn-on delay, rise time, turn-off delay, fall time) to optimize circuit performance and minimize switching losses.
6. Storage: Store in a dry environment to prevent moisture damage and always handle with anti-static precautions to avoid ESD damage.

For detailed specifications and further information, refer to the manufacturer's datasheet.

(For reference only)