Details
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Power MOSFET Modules
| Parameter | Symbol | Min | Typ | Max | Unit | Description |
|---|---|---|---|---|---|---|
| Collector-Emitter Voltage | V CES | 600 | V | Maximum voltage between collector and emitter | ||
| Emitter-Collector Voltage | V ECS | 600 | V | Maximum voltage between emitter and collector | ||
| Collector Current | I C | 18 | A | Continuous collector current | ||
| Peak Collector Current | I CM | 36 | A | Peak collector current | ||
| Power Dissipation | P TOT | 250 | W | Total power dissipation | ||
| Junction Temperature | T J | -40 | 175 | 掳C | Operating junction temperature range | |
| Storage Temperature | T STG | -40 | 150 | 掳C | Storage temperature range | |
| Thermal Resistance | R thJC | 0.3 | K/W | Junction to case thermal resistance |
Instructions for Use:
- Mounting: Ensure proper mounting to a heatsink to manage thermal resistance and keep the junction temperature within specified limits.
- Voltage Handling: Do not exceed the maximum Collector-Emitter or Emitter-Collector voltages to prevent damage.
- Current Management: Operate within the continuous and peak collector current ratings to avoid overheating and potential failure.
- Power Dissipation: Keep the total power dissipation below the rated value, especially under continuous operation.
- Temperature Monitoring: Monitor the junction temperature to ensure it stays within the operational range to maintain reliability.
- Storage Conditions: Store in an environment where temperatures do not exceed the storage temperature range to prevent degradation.
For detailed application notes and more specific guidelines, refer to the manufacturer's datasheet.
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