Details

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BUY CM600YE2N-12F https://www.utsource.net/itm/p/6528103.html

Parameter	Description
Part Number	CM600YE2N-12F
Type	MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor)
Package	TO-247
VDS (Max Voltage)	600 V
ID (Max Current)	12 A
RDS(on) @ VGS=10V	0.55 惟
Power Dissipation	130 W
Operating Temp.	-55掳C to +150掳C
Gate Charge (Qg)	50 nC
Total Gate Charge	70 nC
Input Capacitance	1800 pF

Instructions for Use:

1. Mounting and Handling: Ensure the device is mounted on a suitable heat sink to manage power dissipation effectively. Avoid excessive thermal cycling.
2. Electrical Connections: Connect the drain, source, and gate terminals correctly. Pay attention to polarity and ensure connections are secure.
3. Biasing and Drive Requirements: Apply gate voltage within specified limits to prevent damage. Typical operating range is from 0V to 10V.
4. Protection Circuits: Incorporate protection circuits such as snubbers if switching high voltages or currents to protect against transient spikes.
5. Storage Conditions: Store in a dry environment away from direct sunlight and extreme temperatures.
6. Safety Precautions: Always handle with care to avoid electrostatic discharge (ESD). Use appropriate ESD protection measures when handling the component.

(For reference only)