TT93N12LOF

TT93N12LOF


Specifications
SKU
6528137
Details

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Parameter Description Value
Part Number Full part number of the component TT93N12LOF
Type Type of device Transistor
Polarity Polarity of the transistor NPN
Collector-Emitter Voltage (Vce) Maximum voltage between collector and emitter 120 V
Emitter-Base Voltage (Veb) Maximum voltage between emitter and base 6 V
Collector Current (Ic) Maximum continuous collector current 1.5 A
Power Dissipation (Ptot) Total power dissipation at specified conditions 650 mW
Transition Frequency (fT) Frequency at which gain is unity 250 MHz
Storage Temperature Range (Tstg) Temperature range for storage -55掳C to +150掳C
Operating Temperature Range (Topr) Temperature range for operation -40掳C to +125掳C
Package Type Type of package TO-92
Mounting Type Method of mounting Through Hole

Instructions:

  1. Handling Precautions: Handle with care to avoid damage to leads and body. Use appropriate ESD protection.
  2. Soldering: Ensure soldering temperature does not exceed 260掳C for more than 10 seconds to prevent thermal damage.
  3. Testing: Test parameters such as Vce, Ic, and fT using standard semiconductor test equipment.
  4. Application Circuits: Refer to datasheet application notes for recommended circuits and configurations.
  5. Environmental Considerations: Store in a dry place within the specified storage temperature range to maintain performance integrity.
  6. Compliance: Ensure that usage complies with all relevant safety and regulatory standards.
(For reference only)

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