Details

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BUY 2MBI100TA60 https://www.utsource.net/itm/p/6528197.html

Parameter	Symbol	Min	Typ	Max	Unit	Description
Breakdown Voltage	VBR	-	-	600	V	Maximum repetitive peak reverse voltage
Continuous Current	IT(RMS)	-	-	100	A	RMS value of the maximum continuous sinusoidal waveform
Peak Pulse Current	Ipp	-	450	-	A	Non-repetitive peak pulse current
Junction Temperature	Tj	-25	-	175	掳C	Operating junction temperature range
Storage Temperature	Tstg	-55	-	150	掳C	Operating storage temperature range
Total Device Dissipation	Ptot	-	-	100	W	Maximum total power dissipation

Instructions for Use:

1. Voltage Handling: Ensure that the reverse voltage applied to the diode does not exceed the breakdown voltage (VBR) of 600V to prevent damage.
2. Current Limitations: The device is rated for a continuous current (IT(RMS)) of up to 100A. For pulse applications, ensure that the peak pulse current (Ipp) does not exceed 450A.
3. Temperature Management: Operate the device within the specified junction temperature range (-25掳C to 175掳C). Exceeding these limits can lead to reduced performance or failure.
4. Storage Conditions: Store the device in environments where temperatures do not fall below -55掳C or rise above 150掳C to maintain its integrity.
5. Power Dissipation: Keep the total power dissipation (Ptot) within the limit of 100W to avoid overheating and potential damage.
6. Installation and Handling: Handle with care to avoid physical damage. Follow proper installation procedures to ensure optimal performance and longevity.

(For reference only)