Details

---

BUY MG10Q6ES50A https://www.utsource.net/itm/p/6528290.html
N CHANNEL IGBT (HIGH PWER SWITCHING, MOTOR CONTROL APPLICATIONS)

Parameter	Description	Value	Unit
Part Number	Device Identifier	MG10Q6ES50A	-
Type	Device Type	MOSFET	-
Package	Encapsulation Type	SOP-8	-
VDS (Max)	Drain-Source Voltage	500	V
VGS (th) (Max)	Gate Threshold Voltage	4.0	V
ID (Continuous)	Continuous Drain Current	6.0	A
RDS(on) (Max)	On-State Resistance	0.75	Ω
Power Dissipation	Maximum Power Dissipation	1.2	W
Operating Temp.	Operating Temperature Range	-55 to +150	°C
Storage Temp.	Storage Temperature Range	-55 to +150	°C

Instructions for Use:

1. Handling Precautions: Handle with care to avoid damage. Avoid exposure to high humidity and temperature extremes.
2. Mounting: Ensure proper mounting on the PCB to prevent overheating. Follow manufacturer guidelines for soldering temperature and time.
3. Electrical Connections: Verify all connections are correct according to the circuit diagram. Pay special attention to the polarity of the device.
4. Thermal Management: Implement adequate heat dissipation measures if operating near maximum power dissipation limits.
5. Testing: After installation, test the device under controlled conditions to ensure it operates within specified parameters.
6. Storage: Store in a dry, cool place away from direct sunlight and sources of heat.

(For reference only)