Details

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BUY 6MBI100S-120-50 https://www.utsource.net/itm/p/6528342.html
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Parameter	Description	Value	Unit
Part Number	Device Identifier	6MBI100S-120-50	-
Type	Component Type	MOSFET	-
VDS	Drain-Source Voltage	120	V
ID	Continuous Drain Current	100	A
PD	Power Dissipation	50	W
RDS(on)	On-State Resistance	4.5	mΩ
Qg	Total Gate Charge	79	nC
VGS(th)	Gate Threshold Voltage	3.5 to 5.5	V
Package	Housing Type	D2PAK	-
Operating Temp.	Operating Temperature Range	-55 to 150	°C

Instructions for Use:

1. Installation: Ensure the MOSFET is mounted on a suitable heatsink if operating near maximum power dissipation.
2. Handling: Handle with care to avoid damage to the leads and package. Use anti-static precautions.
3. Biasing: Apply gate voltage within specified limits to prevent damage. Ensure VGS does not exceed ±20V.
4. Storage: Store in a dry, cool place away from direct sunlight and corrosive materials.
5. Mounting: Follow manufacturer guidelines for mounting torque and thermal interface material application.
6. Testing: Before final assembly, test the device parameters using recommended testing procedures to ensure compliance with specifications.

(For reference only)